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A Design of Power Amplifier With Digitally Gate Bias Control for Dual-Band Dual-Power-Mode Operations in 65-nm CMOS Technology

Year: 2025

Type: article

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2025.3597473

Authors: Fengge Xing, Fei You, Zhiqiang Liu, Maojun Pan, Longhao Li, Yingjie Liu, Bo Pang, Songbai He

Institution: University of Electronic Science and Technology of China

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413464817

FWCI:

Cites: 10

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Related to: 10