Work

120 A/1.78 kV p-Cr2O3/n-β -Ga2O3 Heterojunction PN Diodes With Slanted Mesa Edge Termination

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3598936

Authors: Yitao Feng, Hong Zhou, Junyi Ma, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Jun Yuan, Ruoshi Peng, Shaodong Xu, Yue Hao, Jincheng Zhang

Institutions: Xidian University, China Resources (China), Hubei Jiufengshan Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Research Foundation, National Natural Science Foundation of China, National Science Fund for Distinguished Young Scholars, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1020086291, G1184636851, G3502436879, G3862009518, G5821942213, G7578523845, G962364608

OpenAlex ID: W4413465660

FWCI: 2.087

Cites: 30

Cited by: 13

Related to: 10