Enhanced Illumination Stability of Solution-Processed Oxide Thin Film Transistor by Anion and Cation Co-Doping InSnO-Based Channel
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Institution: Shanghai University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G4386156265, G7749114729
OpenAlex ID: W4413469072