Work

257-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Thin Quantum Wells to Achieve Large −3 dB Bandwidth

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3598775

Authors: Chunshuang Chu, Zhengwang Pei, Kangkai Tian, Fuping Huang, Yonghui Zhang, Pengfei Tian, Xiao Wei Sun, Zi-Hui Zhang

Institutions: Guangdong University of Technology, Hebei University of Technology, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Fudan University, Southern University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2517984509, G7535420971

OpenAlex ID: W4413469073

FWCI: 0.949

Cites: 25

Cited by: 3

Related to: 10