Work

Evaluation of Quasi-Ballistic Transport Behaviors in Ge pMOSFETs With NiGe Metal Source/Drain

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3590364

Authors: Rui Su, Jing Yan, Dawei Gao, Junkang Li, John Robertson, Rui Zhang

Institution: Zhejiang University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guangxi Key Research and Development Program

Awards: G2315877745, G3642759932

OpenAlex ID: W4413469297

FWCI: 0.228

Cites: 29

Cited by: 1

Related to: 10