Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers
Year: 2025
Type: article
Abstract: The correlation between variable-range hopping conduction and key material parameters is investigated, including the Al concentration (C Al), the full width at half maximum (FWHM) of the X-ray diffraction peak, and the lattice strain in heavily Al-doped 4H-SiC epilayers with C Al exceeding 1020 cm−3. The characteristic temperature T 0 derived from the gradient of Mott plots (i.e. ln ρ ( T ) versus T −1/4) of the temperature-dependent resistivity ρ(T) decreases with increasing C Al. Meanwhile, the FWHM correlates positively with C Al. Because the density of localized states at the Fermi level, g(E F(T)), is inversely proportional to T 0, g(E F(T)) increases as a power function of C Al. It also increases with the lattice strain.
Authors: Hideharu Matsuura, Yuki Kondo, Atsuki Hidaka, Kazuma Eto, Shiyang Ji, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4413479168