Bright and stable green quantum dot light-emitting diodes via increasing electron concentration
Year: 2025
Type: article
Abstract: Quantum dot (QD) light-emitting diodes (QD-LEDs), known for their high color quality and cost-effectiveness, have emerged as promising candidates for next-generation display and lighting technologies. However, suboptimal electron concentration resulting from defects at the QD core-shell interface limits the brightness and operational lifetime, thereby hindering the commercialization of QD-LEDs. Here, we present high-brightness and stable LEDs based on oleylamine (OAM)-assisted green ZnCdSe/ZnSeS/ZnS QDs. OAM treatment alleviates the dangling bonds on the QD core surfaces and eliminates defect states at the core/shell interface, thereby suppressing exciton quenching at the QD-electron transport layer (ETL) interface. Our findings demonstrate that QD-LEDs with OAM facilitate electron transport from the ETL to the QDs, increasing electron concentration, and reducing the hole injection barrier, ultimately accelerating carrier radiative recombination. Consequently, the green QD-LEDs exhibit a luminance of 1,105,500 cd/m² and a record-long T95 operational lifetime of exceeding 24,800 hours at 1000 cd/m2. Our work provides an alternative pathway for the full-color and high-definition display application of high-performance QD-LEDs.
Source: Nano Research
Authors: Leilei Zhao, Han Zhang, Lei Wang, Weipeng Liu, Xiaosuo Wang, Bo Li, Qingli Lin, Fengjia Fan, Huaibin Shen
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $5,290
OpenAlex ID: W4413494227
