Work

Simulation and Comparison of Single Gate Mosfet and Novel Double Gate Mosfet to Improve the Quantum Capacitance

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Engineering Technologies and Applied Sciences (ICETAS)

DOI: 10.1109/icetas62372.2024.11120043

Authors: P.Hemanth Kumar, Mohan Chokkalingam, Vidya Saranya S, Bushra Hamid

Institution: Saveetha University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413513657

FWCI:

Cites: 25

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Related to: 10