A reverse conducting BRT (RC-BRT) with high dV/dt immunity suitable for pulse power applications
Year: 2025
Type: article
Abstract: This paper proposes a Reverse Conducting Base Resistance-controlled Thyristor with P-body region(P-RC-BRT), which has high dV/dt immunity and achieves blocking at zero gate voltage. The characteristics of P-RC-BRT were compared with the conventional BRT and RC-BRT, and the pulse discharge characteristics of devices with different circuit parameters were analyzed, which were as high as 6208 A and 130.8 kA/μs. The dV/dt immunity of the devices was studied comparatively, the P-RC-BRT has higher dV/dt immunity.
Source: IEICE Electronics Express
Authors: Chao Zhang, Chunyan Liu, Cailin Wang, Wuhua Yang, Ruliang Zhang
Institution: Xi'an University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4413517002