Work

Cation Disorder‐Driven d‐Band Center Engineering and Dual‐Mode Phonon Coupling Enable Ultrastable, High‐Rate K + Storage in Ge–Sn Chalcogenides

Year: 2025

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202518968

Authors: Kai‐Siang Jhang, Ching‐Ya Tseng, Hsing‐Yu Tuan

Institution: National Tsing Hua University

Language: English

Topic: Advancements in Battery Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4413527019

FWCI: 1.155

Cites: 63

Cited by: 5

Related to: 10