Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
Year: 2025
Type: article
Abstract: 4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remain scarce under high injection levels. This work investigates the Auger recombination coefficient (C) in heavily nitrogen-doped 4H-SiC via a time-resolved photoluminescence method across varied carrier concentrations and temperatures. Results show faster decay with increasing excitation and temperature, confirming the dominance of Auger recombination. The coefficient follows C ∝ T 1.19 , increasing from 3.0 × 10−31 cm6 s–1 at room temperature due to phonon interactions. These insights aid the design of high-efficiency SiC power devices.
Source: Applied Physics Express
Authors: Endong Zhang, Hiroko Matsuyama, Masashi Kato
Institution: Nagoya Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,365
OpenAlex ID: W4413545346