Work

High Endurance Resistive Switching Based on Phase Transition Realized in MoTe2 Memristors

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3602180

Authors: Yang Hong, Chaohui Su, Zhiyuan Li, Xiangshui Miao, Rui Yang

Institution: Huazhong University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Shenzhen Scientific and Technological Foundation

Awards: G1157032640, G2384027878, G5128659503

OpenAlex ID: W4413554996

FWCI: 0.455

Cites: 24

Cited by: 2

Related to: 10