Work

Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics

Year: 2025

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c03444

Authors: Zhili Cheng, Zian Hong, Zixin Li, Zhaotan Gao, Menglin Mao, Hongzhi Guo, Ruiqi Jiang, Mengjiao Li, Jing Cheng, Liyan Shang, Shijing Gong, Jinzhong Zhang, Zhigao Hu, Junhao Chu

Institutions: East China Normal University, Shanghai University, Shanxi University, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, State Key Laboratory of Infrared Physics

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, East China Normal University, Natural Science Foundation of Henan Province, Nanyang Institute of Technology, National Key Research and Development Program of China, Key Scientific Research Project of Colleges and Universities in Henan Province

Awards: G1874996448, G1937786543, G5149495135, G7119341048, Te 基纳米材料体系光控相变机制及其光电功能开关器件研究, G7382879426, G7713386161, G8129351382, G8262912161

OpenAlex ID: W4413579859

FWCI: 1.034

Cites: 43

Cited by: 5

Related to: 10