Work

Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0266252

Authors: Wanyi Ling, Kun Ren, Dianyu Qi, Yongyu Wu, Guangji Li, Miao Zhou, Qingshuang Xu, Xuan Li, Zhenghui Xia, Dertsyr Fan, Ichun Chuang, TzungWen Cheng, Chenming Tsai, Dawei Gao

Institution: Zhejiang University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G146139578

OpenAlex ID: W4413596758

FWCI: 0.924

Cites: 10

Cited by: 4

Related to: 10