Innovative stress-release method for low-stress flexible Al2O3 encapsulation films in OLED applications
Year: 2025
Type: article
Abstract: This study presents a low residual tensile stress, flexible thin film encapsulation with a 2 mm bending radius based on atomic layer deposition (ALD), specifically plasma-enhanced ALD (PEALD). By utilizing polydimethylsiloxane (PDMS) to release stress during deposition, we achieved a wrinkled morphology film that reduces stress magnitude from 10 3 to 10 2 compared to conventional Al 2 O 3 films. This wrinkled film enhances optical modulation to light extraction, increasing the external quantum efficiency (EQE) of organic light-emitting diode (OLED) by up to 14.95%. The water vapor transmission rate (WVTR) is 4.49 × 10 − 5 g/m 2 /day at 60 °C/90% RH, and the film retains about 90% of its initial properties after 10,000 bending cycles. This work introduces a novel solution for flexible ALD encapsulation, demonstrating ultra-flexible properties while improving device efficiency.
Source: npj Flexible Electronics
Authors: Guanran Wang, Zhenyu Wang, Jianyang Ren, Zhijun Wu, Yu Duan
Institutions: Jilin University, Huaqiao University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,090
OpenAlex ID: W4413611846