Work

Biased Poly-gate-separated Schottky Barrier Diode in CMOS

Year: 2025

Type: article

Source: JSTS Journal of Semiconductor Technology and Science

DOI: 10.5573/jsts.2025.25.4.414

Authors: Deokgi Kim, Jaehyun Noh, Wooyeol Choi, Dongha Shim

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413617841

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