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A Study on the 4H-SiC-based ESD Protection Circuit Using Low Trigger Voltage and Gate Leakage Prevention Technology by Adding PNP BJT

Year: 2025

Type: article

Source: JSTS Journal of Semiconductor Technology and Science

DOI: 10.5573/jsts.2025.25.4.435

Authors: U-Yeol Seo, Dong-Hyeon Kim, Jae-Yoon Oh, Min-Seo Kim, Yong-Seo Koo

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413618557

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