Work

Evaluation of Threshold Hysteresis for SiC MOSFETs in Active Gate Drive Application

Year: 2025

Type: article

Source: IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI: 10.1109/jestpe.2025.3602658

Authors: Binbing Wu, Hongyu Lin, Hao Feng, Li Ran

Institution: Chongqing University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G6957512314

OpenAlex ID: W4413630509

FWCI:

Cites: 34

Cited by:

Related to: 10