Ag-alloying enables wide-bandgap (1.69 eV) chalcopyrite solar cell with 11.5% efficiency and over 900 mV open circuit voltage from molecular solution
Year: 2025
Type: article
Abstract: Development of wide-bandgap solar cells is important to expand the application scenarios of photovoltaic. Pure sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) with high stability are ideal absorber materials for these applications. The CIGS are mostly fabricated from vacuum-method with low-bandgap (< 1.65 eV) or poor performance. Here, we fabricate wide-bandgap CIGS from molecular solution through cost-effective scalable doctor-blading technique. Results show the performance of intrinsic CIGS is limited by low crystallinity. Ag is incorporated in CIGS by substitution of Cu in the solution, which improves film crystallinity and reduces defect concentration. Further, Ag-alloying lowers CIGS energy-band without changing bandgap, decrease conduction band offset at the heterojunction. The greatly reduced charge carrier recombination and charge transfer resistance lead to CIGS solar cell with an efficiency of 11.5% and an open circuit voltage (VOC) of 904 mV with a bandgap of 1.69 eV, the highest efficiency and lowest VOC loss of wide-bandgap CIGS solar cell.
Source: Nano Research
Authors: Chengfeng Ma, Chuan’an Ding, Haoyu Guo, Yuqi Liu, Ningyuan Chen, Yize Li, Chunxu Xiang, Shaoying Wang, Weibo Yan, Kang Xiao, Wei Huang, Hao Xin
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $5,290
OpenAlex ID: W4413634206