Work

Modeling of Gate-Induced-Drain-Leakage Under Low Electric Field in FDSOI MOSFETs

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3601574

Authors: Nisha Manzoor, Debashish Nandi, Chetan Kumar Dabhi, Aloke K. Dutta, Yogesh Singh Chauhan

Institution: Indian Institute of Technology Kanpur

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

Award: G2887952335

OpenAlex ID: W4413640281

FWCI: 0.231

Cites: 28

Cited by: 1

Related to: 10