Work

Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3602857

Authors: Vaidehi Vijay Painter, Raphael Sommet, Christophe Chang, Valeria Di Giacomo Brunel, Florent Gaillard, Jean-Christophe Nallatamby, P. Vigneshwara Raja

Institutions: Indian Institute of Technology Dharwad, Centre National de la Recherche Scientifique, XLIM, Université de Limoges, United Monolithic Semiconductor (France)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413655115

FWCI: 0.942

Cites:

Cited by: 3

Related to: 10