Work

Non-uniform matching performances in mesa-isolated SOI MOSFETs

Year: 2025

Type: article

Abstract: This work studies the threshold voltage mismatch of mesa-isolated SOI pMOSFETs through a breakdown between edge and center contributions. Pelgrom’s law is followed if a proper care is taken in the Vt extraction method. Applied to pMOS devices we observed that despite its parasitic nature, the edge transistor mismatch is as good as that of the center, regardless of channel doping and back-gate bias. Mismatch degradation in reverse back-bias mode is observed and attributed to the presence of floating body effects.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2025.109224

Authors: Pierre Lhéritier, Daphnée Bosch, Giovanni Romano, Fabienne Ponthenier, Sylvain Joblot, Joris Lacord

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, STMicroelectronics (France)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,410

OpenAlex ID: W4413655198

FWCI:

Cites: 5

Cited by:

Related to: 10