Controlling Bias Field of Pinned Layer Stacks for Double‐Pinned‐Layer Magnetic Tunnel Junction for STT‐MRAM
Year: 2025
Type: article
Abstract: Double‐pinned‐layer Magnetic Tunnel Junction (Double PL MTJ) enhances spin‐transfer‐torque magneto‐resistive random‐access memory (STT‐MRAM) performance by requiring anti‐parallel magnetization between both PLs at free layer interfaces and minimizing magnetostatic bias field (Hbias) from both PLs to enable reliable switching. In this study, a numerical method is established to accurately calculate Hbias and investigate PL designs that simultaneously fulfill both conditions. Among the configurations examined, a bottom PL composed of anti‐parallel (AP) coupled three magnetic layers (FM1, FM2, and FM3) combined with a top PL consisting of two such layers (FM4 and FM5) is identified a optimal. This configuration achieved the desired anti‐parallel magnetization at FL interfaces and effectively suppressed Hbias. The proposed structure enables a robust design strategy for Double PL MTJ, addressing key limitations such as high write current and paving the way for MTJ for large‐scale application in STT‐MRAM.
Source: Advanced Electronic Materials
Authors: Shujun Ye, Koichi Nishioka
Institution: Beijing Institute of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
Funder: Government of Jiangxi Province
OpenAlex ID: W4413669004