Work

Performance Enhancement of GaN Super-Lattice Castellated Field-Effect Transistors (SLCFETs) via Topside Integration of Near-Isotropic Polycrystalline Diamond

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3602825

Authors: Jeong-Kyu Kim, Mohamadali Malakoutian, Thomas Andres Rodriguez, Wiley Yu, Rohith Soman, Brian Novak, Michael P. Stocker, Brian Bersch, Robert S. Howell, Shamima Afroz, Srabanti Chowdhury

Institutions: Stanford University, Northrop Grumman (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

Award: G6536321672

OpenAlex ID: W4413677496

FWCI: 0.93

Cites: 25

Cited by: 3

Related to: 10