Work

Electrical and Optical Characterization of a Normally-Off AlGaN/GaN HEMT With a Segmented-Extended p -GaN Gate Structure

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3601086

Authors: Xinyue Dai, Qimeng Jiang, Baikui Li, Haiyang Li, Sen Huang, Jie Fan, Xinhua Wang, Yuxi Wan, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Shenzhen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G442552545, G7926517203

OpenAlex ID: W4413677606

FWCI: 0.311

Cites: 38

Cited by: 1

Related to: 10