Work

Grafted GaAs/Si Heterojunction Tunnel Diodes With Improved Peak-to-Valley Current Ratio (PVCR) of up to 36.38

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3602858

Authors: Jie Zhou, Yifan Wang, Ziqian Yao, Qingxiao Wang, Yara S. Banda, Jiarui Gong, Yang Liu, Carolina Adamo, Patrick Marshall, Yi Lu, Tsung-Han Tsai, Yiran Li, Vincent Gambin, Tien Khee Ng, Boon S. Ooi, Zhenqiang Ma

Institutions: University of Wisconsin–Madison, King Abdullah University of Science and Technology, Northrop Grumman (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Global Collaborative Research, King Abdullah University of Science and Technology, Defense Sciences Office, DARPA

Awards: G5017041929, G7684374490

OpenAlex ID: W4413677703

FWCI: 0.462

Cites: 35

Cited by: 2

Related to: 10