Work

Backside Ferroelectric-Assisted Charge Trap Flash (BF-CTF) Device for a Wide Memory Window and Read Disturbance-Free Performance

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3603028

Authors: Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Jong Kyung Park, Byung Jin Cho

Institutions: Korea Advanced Institute of Science and Technology, Seoul National University of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G2624746692

OpenAlex ID: W4413677943

FWCI: 0.231

Cites: 23

Cited by: 1

Related to: 10