Work

Demonstration Highly Scalability of Ultra-Thin EOT HfO₂-ZrO₂-HfO₂ Gate Stacks With 25 nm L g FinFET for Advanced CMOS Technology

Year: 2025

Type: article

Abstract: We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length (Lg) of 25 nm. Benefiting from the ultra-thin 7.1 E EOT on HZH films after 450 0C annealing, superior performance, including enhanced driving current (Ion) and short channel effect (SCE) immunity, is achieved on HZH-FinFETs and is maintained with Lg scaled to 25 nm. Compared with traditional HfO2-based FinFETs, a 38% increase in Ion and a 54% improvement in transconductance are observed in HZH-FinFETs with 25 nm Lg. Furthermore, due to the absence of IL scavenging and low interface trap density (Dit) in HZH gate stacks, mobility degradation was not observed in the HZH FinFET. Additionally, the HZH gate stack shows a comparable level of TDDB and NBTI reliability to that of HfO2 devices, indicating the great potential of HZH for future advanced node CMOS technology.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2025.3603648

Authors: Kun Zhong, Zhaohao Zhang, Siyuan Liu, Haiyuan Lyu, Junfeng Li, Huaxiang Yin

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funders: Youth Innovation Promotion Association of the Chinese Academy of Sciences, Youth Innovation Promotion Association