Work

Online Gate Leakage Current Monitoring for SiC MOSFET Based on Average Gate Drive Current Extraction

Year: 2025

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2025.3603864

Authors: Wenyuan Ouyang, Tao Fan, Zhijie Qiu, Dan Zheng, Xiaofeng Jiang, Puqi Ning, Xuhui Wen

Institutions: Chinese Academy of Sciences, University of Chinese Academy of Sciences, Institute of Electrical Engineering

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413785746

FWCI: 0.231

Cites: 13

Cited by: 1

Related to: 10