Work

Total Ionizing Dose Effect of CNTFETs and SRAM Cells With Different Bias Conditions

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3603426

Authors: Tongfei Ren, Jiangwei Cui, Qiwen Zheng, Haitao Xu, Xiaolong Li, Ningfei Gao, Mingzhu Xun, Gang Yu, Qi Guo, Yudong Li

Institutions: Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Xinjiang Province, National Natural Science Foundation of China, Youth Innovation Promotion Association

Awards: G2051911031, G2360183159, G4801729571

OpenAlex ID: W4413785963

FWCI: 1.155

Cites: 46

Cited by: 5

Related to: 10