Photo-response enhancement in longitudinal porous GaN-based UV
Year: 2025
Type: article
Abstract: Gallium nitride (GaN), as a typical wide bandgap semiconductor, is an excellent candidate to fabricate the high-performance UV photodetector, due to its excellent intrinsic nature. However, the weak light absorption of conventional bulk GaN limits the further improvement of photo-response of GaN-based photodetectors. Here, we have prepared a longitudinal porous GaN using a simple electrochemical etching process, and then fabricated a porous GaN-based photodetector (Porous PD). The photo-response in the Porous PD has been improved significantly compared to the control planar GaN-based photodetector (Planar PD). At −1.2 V, the photo current ( I photo ) in the Porous PD is ∼ 75 times higher than that of Planar PD, and the maximum responsivity of the Porous PD can reach 3.11 × 10 4 A/W, which is attributed to the large internal gain (> 1.06 × 10 5 ). The maximum specific detectivity of the Porous PD has also been calculated to be 5.22 × 10 13 Jones, two orders of magnitude higher than that of the Planar PD. Our work paves the way to develop high-performance GaN-based PDs for detecting weak optical signals.
Source: Chinese Physics B
Authors: Jing 京 Li 李, Shaolong 少龙 Shi 师, Yutong 昱潼 Chen 陈, Zhanhong 占红 Ma 马, Xia 霞 Li 李, Yang 洋 Liu 刘, Tiangui 天贵 Hu 胡
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,500
OpenAlex ID: W4413797381