Work

SnO 2 /In 2 S 3 Dual Electron Transport Layer for Interface Defect Regulation and Band Engineering in Sb 2 S 3 Solar Cells

Year: 2025

Type: article

Source: ACS Applied Energy Materials

DOI: 10.1021/acsaem.5c02099

Authors: Xiaojuan Xu, Xinyu Zhang, Zixiang Zhang, Zerui Wang, Chunyan Yang

Institution: Lanzhou Jiaotong University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, West Light Foundation of the Chinese Academy of Sciences

Awards: G398351315, G6865139206, G9000154125

OpenAlex ID: W4413805533

FWCI: 1.386

Cites: 46

Cited by: 6

Related to: 10