Work

Gate failure process and mechanism of SiC MOSFETs under the effect of multiphysics field during short-circuit transients

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ae00ea

Authors: Yuting Tang, Min Ren, Xin Zhang, Fang Zheng, Yuchu Luo, Ye Tao, Nan Nie, Zhihai Liu, Anna Zhang, Rongyao Ma, Zehong Li, Bo Zhang

Institutions: University of Electronic Science and Technology of China, China Resources (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: ZTE Corporation

OpenAlex ID: W4413820873

FWCI:

Cites: 22

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Related to: 10