Work

Influence of Silicon Nitride Thickness on the Passivation and Contact Properties of Phosphorus-Doped Poly-Silicon on Oxide Structures

Year: 2025

Type: conference-paper

Source: Conference record of the IEEE Photovoltaic Specialists Conference

DOI: 10.1109/pvsc59419.2025.11132653

Authors: Thibaut Desrues, Franck Dhainaut, Raphaël Cabal, Baptiste Marteau, Anis Jouini

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux, Institut National de l'Énergie Solaire, ECM Technologies (France)

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413822214

FWCI:

Cites: 4

Cited by:

Related to: 10