Electrical properties of ZnO buffer layers and the performance of CdSeTe/CdTe solar cells
Year: 2025
Type: conference-paper
Abstract: The electrical properties of as-deposited sputtered ZnO films with varying oxygen content in the Ar\O2working gas have been investigated using an ultra-sensitive parallel dipole line (PDL) Hall effect system. Carrier concentration and mobility of the films have been extracted from the Hall effect measurements. Films deposited with below 0.5% oxygen in the Ar\O2working gas have resulted in high carrier concentration on the order of 1018cm-3, whereas films with higher oxygen content were too resistive for measurement, suggesting a low carrier concentration below 1012cm-3. ZnO films were used as a buffer layer in CdSeTe/CdTe devices, and the performance of complete devices was extracted from J-V measurements. Surprisingly, ZnO films with two extreme carrier concentrations did not lead to significant changes in device performance. The highest conversion efficiency was achieved with an as-deposited ZnO layer with low carrier concentration deposited with 0.5% oxygen in the Ar\O2working gas.
Institutions: Loughborough University, First Solar (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4413822634