Work

Electron-selective contacts for c-Ge(p) substrates by annealing phosphorous-doped PECVD silicon films

Year: 2025

Type: conference-paper

Abstract: In this work we report on an electron-selective contact scheme for p-type c-Ge substrates within the framework of epitaxial-free thermophotovoltaic devices. The technique consists of depositing phosphorous-doped silicon layers by PECVD, which undergo an annealing process at temperatures in the 700°C range. In particular, we compare the suitability of the approach for nanocrystalline and amorphous silicon films, obtaining sheet resistances below 100 Ω/sq. and hole saturation current densities lower than 10µA/cm2. By ToF-SIMS analysis we are able to confirm silicon and phosphorous diffusion inside the c-Ge bulk. Finished devices are tested under 1-sun illumination, yielding efficiencies of 4.53% and 6.29% for the amorphous and nanocrystalline-based layers, respectively.

Source: Conference record of the IEEE Photovoltaic Specialists Conference

DOI: 10.1109/pvsc59419.2025.11132850

Authors: Gerard Rivera, Mansur Gamel, Gema López, Moisés Garín, Isidro Martín

Institutions: Universitat Politècnica de Catalunya, Universitat de Vic - Universitat Central de Catalunya

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: green

OpenAlex ID: W4413823793

FWCI:

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