Work

Self‐Powered UVC and X‐Ray Photodetection in Single Sn‐Doped β‐Ga 2 O 3 Microwire Schottky Diodes

Year: 2025

Type: article

Source: Advanced Materials Technologies

DOI: 10.1002/admt.202501212

Authors: Chamseddine Bouhafs, Daniel Carrasco, Ricardo Lorena, Carlo Alfisi, Jaime Dolado, Paula Pérez‐Peinado, Pedro Hidalgo, Diogo Caetano, Gema Martínez‐Criado, Bianchi Méndez, Emilio Nogales, Katharina Lorenz, Susana Cardoso

Institutions: Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Universidad Complutense de Madrid, European Synchrotron Radiation Facility, University of Lisbon, Instituto Superior Técnico

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministerio de Ciencia e Innovación, Fundação para a Ciência e a Tecnologia

Awards: Processamento de Ga2O3 por feixes de iões, G5855251324, INESC Microsistemas e Nanotecnologias – Instituto de Engenharia de Sistemas e Computadores para os Microsistemas e as Nanotecnologias

OpenAlex ID: W4413853803

FWCI: 0.326

Cites: 79

Cited by: 2

Related to: 10