Work

Bitline-Paired 2T SOT-MRAM Cell for Energy-Efficient Memory Operation

Year: 2025

Type: article

Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI: 10.1109/tvlsi.2025.3601052

Authors: Taehwan Kim, Jongsun Park

Institution: Korea University

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Research Foundation of Korea

Awards: G1545237249, G5582485663

OpenAlex ID: W4413887009

FWCI:

Cites: 49

Cited by:

Related to: 10