Work

An Investigation Into the Mechanism of AC Bias Temperature Instability in SiC MOSFETs Through Gate Charging Characteristics

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3604592

Authors: Zicheng Wang, Cen Chen, Xuerong Ye, Jiangyuan Du, Hao Niu, Guofu Zhai, Abraham M. Alcaide, Jose I. Leon, Leopoldo G. Franquelo

Institutions: Harbin Institute of Technology, Ministry of Industry and Information Technology, Universidad de Sevilla

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Heilongjiang Province

Award: G7894751561

OpenAlex ID: W4413887012

FWCI: 0.455

Cites: 35

Cited by: 2

Related to: 10