Work

SiGe Channel Trench-Free Complementary FET With Direct Backside Contact for Suppressed Process Variation and High-Speed Applications

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3602934

Authors: Yan Li, Longyu Sun, Huaizhi Luo, Haoyan Liu, Fei Zhao, Yongliang Li

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Beijing Information Science & Technology University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3484937837

OpenAlex ID: W4413887417

FWCI: 0.462

Cites: 28

Cited by: 2

Related to: 10