Work

Comparative Analysis of Grain Boundary Effects in FET-Type and Diode-Type 3-D nand flash memory

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3602378

Authors: Jinsu Kim, Hansol Kim, Jisung Im, Sung-Tae Lee, Dongseok Kwon, Nagyong Choi, Sung Yun Woo

Institutions: Kyungpook National University, Hongik University, Gwangju Institute of Science and Technology, Seoul National University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National University Research Fund of China

OpenAlex ID: W4413887447

FWCI: 0.231

Cites: 34

Cited by: 1

Related to: 10