Work

Time-dependent monotonic and non-monotonic dynamic R DS,ON variations and mechanisms in p-GaN Gate HEMTs

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ae0138

Authors: Yao Li, Ke Zhang, Xinghuan Chen, Yunfeng Hu, Zhiyuan He, Zongqi Cai, Yijun Shi, Yuan Chen, Guoguang Lu, Liang He

Institutions: Guangdong University of Technology, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Foundation of Guangdong Province for Distinguished Young Scholars

Awards: G169498797, G2031999280, G429300216, G5333416370

OpenAlex ID: W4413889050

FWCI: 0.623

Cites: 32

Cited by: 2

Related to: 10