Work

Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ae0150

Authors: Shaocong Lv, Xianglong Li, Shuaiying Zheng, Tan Zhang, Baoqing Zhang, Yu Lin, Yiming Wang, Fei Wang, Qian Xin, Yuxiang Li, Aimin Song, Jidong Jin, Jiawei Zhang

Institutions: Shandong University, Southern University of Science and Technology, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, University of Manchester, Hanyang University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Shandong University, National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China

Awards: G2911514216, G4381159175, G4523278983, G5759700028, G7335296178

OpenAlex ID: W4413889126

FWCI: 0.225

Cites: 19

Cited by: 1

Related to: 10