Work

Effect of Cu-Zn-Sn capping on the preparation of Cu2Zn(Sn,Ge)(S,Se)4 absorber layers from Cu-Zn-Sn-Ge alloy precursors

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ae0134

Authors: Noritaka Momose, Myo Than Htay Yamamoto, Sayaka Nishimura, Shuji Takahashi, Yoshio Hashimoto

Institutions: National Institute of Technology, Nagano College, Shinshu University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4413889263

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Cites: 39

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Related to: 10