ML-driven investigation of non-ideal effects in multi-gate MOSFET characteristics for sub-10 nm technologies
Year: 2025
Type: article
Source: Engineering Research Express
Authors: Vadde Surya Teja, Srinadharaju Saketh Varma, Dheeren Ku Mahapatra, Biswajit Jena
Institution: Vellore Institute of Technology University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4413923476
