Work

Asymmetric Contact Resistances in IGZO Vertical Channel-All-Around FETs

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3604792

Authors: Xianglie Sun, Wei Yu, Fuwang Yang, Meichen Jin, Chang Liu, Chuanke Chen, Weiwei Li, Di Geng, Shujuan Mao, Zhengyong Zhu, Jing Zhang, Guilei Wang, Bok-Moon Kang, Chao Zhao

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G8460312636

OpenAlex ID: W4413926059

FWCI: 1.823

Cites: 20

Cited by: 8

Related to: 10