High Performance AlN/GaN/AlN/GaN Double Channel Fin-HEMT for Ka-band Low Voltage Wireless Communication Applications
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Can Gong, Minhan Mi, Yuwei Zhou, Ting Meng, Xinyao Zhang, Tianhao Liu, Xiangle Jiang, Xiang Du, Feiyang Chen, Xiaohua Ma, Yue Hao
Institution: Xidian University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G3187034851, G6824444524, G704711181
OpenAlex ID: W4413926225