Work

An analytical surface-potential-based I–V and C–V models of AlGaN/GaN HEMTs

Year: 2025

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ae0211

Authors: Hongbin Lin, Qizhi Hong, Wenchao Li, Panpan Tan, Chenfei Jiang, Xuzhong Ding, Fei Yu, Shuting Cai

Institution: Guangdong University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1360373985, G911673069

OpenAlex ID: W4413938333

FWCI:

Cites: 20

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Related to: 10