Work

High performance annealing-free thin-film transistors with 7-nm In0.72Ga0.28O/13-nm In0.46Ga0.54O homojunction channel

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0278333

Authors: Kun Wang, Xue Chen, Zhiyu Zeng, Xi Su, Tao Guo, Zexin Tu, Jiaxian Wan, Liwei Ji, Hao Wu, Chang Liu

Institutions: Wuhan University, Anhui University of Science and Technology, Hubei Jiufengshan Laboratory

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G3734442209, G7224634673

OpenAlex ID: W4413952662

FWCI:

Cites: 44

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