Effect of O2 dilution and substrate temperature on the etching of SiNx in a C4F6/Ar plasma
Year: 2025
Type: article
DOI: 10.1116/6.0004777
Institutions: Colorado School of Mines, Lam Research (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Lam Research
OpenAlex ID: W4413954078